Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-22
2005-02-22
Elms, Richard (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S652000, C438S629000, C438S637000
Reexamination Certificate
active
06858534
ABSTRACT:
A method of manufacturing a memory device addressing reliability and refresh characteristics through the use of a multilayered doped conductor described. The multilayered doped conductor creates a high dopant concentration in the active area close to the channel region. The rich dopant layer created by the multilayered doped conductor is less suspectible to depletion from trapped charges in the oxide. This improves device reliability at burn-in and lowers junction leakage, thereby providing a longer period between refresh cycle.
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Dinsmore & Shohl LLP
Elms Richard
Micro)n Technology, Inc.
Owens Beth E.
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