Method of forming a polycrystalline silicon layer

Details Method of forming a polycrystalline silicon layer Method of forming a polycrystalline silicon layer

2005-02-08

2005-02-08

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S488000, C438S799000

Reexamination Certificate

active

06852609

ABSTRACT:
A method of forming a polycrystalline silicon layer. An amorphous silicon layer on a substrate is completely melted using a laser beam passed through a mask so as to form a polycrystalline silicon layer. The upper portion of the polycrystalline silicon layer is then re-melted and re-crystallized using a laser beam passed through a mask. The mask includes a high transmittance region for completely melting the amorphous silicon layer and a low transmittance region for re-melting the upper portion of the polycrystalline silicon layer.

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patent: 409283441 (1997-10-01), None
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