Method of controlling critical dimension microloading of...

Details Method of controlling critical dimension microloading of... Method of controlling critical dimension microloading of...

2005-06-28

2005-06-28

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

Reexamination Certificate

active

06911399

ABSTRACT:
A method for trimming photoresist features on a semiconductor substrate in a processing system. The method utilizes a process gas mixture comprising a hydrocarbon gas, an oxygen gas and an inert gas. The critical dimension (CD) microloading of the dense and the isolated regions can be eliminated and the photoresist trimming rate can also be reduced to enable better critical dimension (CD) control.

REFERENCES:
patent: 4447731 (1984-05-01), Kuni et al.
patent: 4767496 (1988-08-01), Hieber
patent: 4911103 (1990-03-01), Davis et al.
patent: 5109430 (1992-04-01), Nishihara et al.
patent: 5171393 (1992-12-01), Moffat
patent: 5452521 (1995-09-01), Niewmierzycki
patent: 5653894 (1997-08-01), Ibbotsen et al.
patent: 5798529 (1998-08-01), Wagner
patent: 5913102 (1999-06-01), Yang
patent: 5926690 (1999-07-01), Toprac et al.
patent: 5944940 (1999-08-01), Toshima
patent: 5948203 (1999-09-01), Wang
patent: 5963329 (1999-10-01), Conrad et al.
patent: 5980766 (1999-11-01), Flamm et al.
patent: 6001699 (1999-12-01), Nguyen et al.
patent: 6004706 (1999-12-01), Ausschnitt et al.
patent: 6007675 (1999-12-01), Toshima
patent: 6027842 (2000-02-01), Ausschnitt et al.
patent: 6033814 (2000-03-01), Burdorf et al.
patent: 6054710 (2000-04-01), Bruggeman
patent: 6124212 (2000-09-01), Fan et al.
patent: 6143081 (2000-11-01), Shinriki et al.
patent: 6148239 (2000-11-01), Funk et al.
patent: 6161054 (2000-12-01), Rosenthal et al.
patent: 6175417 (2001-01-01), Do et al.
patent: 6178239 (2001-01-01), Kishinsky et al.
patent: 6225639 (2001-05-01), Adams et al.
patent: 6245581 (2001-06-01), Bonser et al.
patent: 6368975 (2002-04-01), Balasubramhanya et al.
patent: 6388253 (2002-05-01), Su
patent: 6413867 (2002-07-01), Sarfaty et al.
patent: 6424417 (2002-07-01), Cohen et al.
patent: 6454417 (2002-09-01), Takamoto et al.
patent: 6455437 (2002-09-01), Davidow et al.
patent: 6479309 (2002-11-01), Wright
patent: 6486492 (2002-11-01), Su
patent: 6501555 (2002-12-01), Ghandchari et al.
patent: 6606738 (2003-08-01), Bell et al.
patent: 6625497 (2003-09-01), Fairbairn et al.
patent: 6762130 (2004-07-01), Laaksonen et al.
patent: 2002/0072003 (2002-06-01), Brill et al.
patent: 2002/0155629 (2002-10-01), Fairbairn et al.
patent: 2002/0160628 (2002-10-01), Okoroanyanwu et al.
patent: 2002/0171828 (2002-11-01), Cohen et al.
patent: 2003/0000922 (2003-01-01), Subramanian et al.
patent: 2003/0045098 (2003-03-01), Verhaverbeke et al.
patent: 2003/0092281 (2003-05-01), Ramachandramurthy et al.
patent: 0 727 715 (1996-08-01), None
patent: 1 079 428 (2001-02-01), None
patent: 1 083 424 (2001-03-01), None
patent: 61 290312 (1986-12-01), None
patent: WO 01/09934 (2001-02-01), None
patent: WO 01/84382 (2001-11-01), None
patent: WO 02/09170 (2002-01-01), None
patent: WO 02/37186 (2002-05-01), None
patent: WO 03/003447 (2003-01-01), None
Yang, et al., “Line-Profile and Critical Dimension Measurements Using a Normal Incidence Optical Metrology System,” Proceedings of SPIE vol. 4689, Mar. 2002.
Kota, et al., “Advanced Process Control for Polysilicon Gate Etching Using Integrated Optical CD Metrology”, Proceedings of SPIE, vol. 5044 (2003) pp. 90-96.
Anthony J. Toprac, “AMD's Advanced Process Control of Poly-gate Critical Dimension”, SPIE Conference on Process, Equipment and Materials Control in Integrated Circuit Manufacturing, Sep. 1999, Santa Clara, CA. SPIE, vol. 3882.
Lee, M.E., “Analysis of Reflectometry and Ellipsometry Data from Patterned Structures”, Characterization and Metrology for ULSI Technology: 1998 International Conference, ed. D.G. Seiler, et al., 1998, pp. 331-335.
McIntosh, J.M., et al., “Approach to CD SEM Metrology Utilizing the Full Waveform Signal”, Proceedings of the SPIE, vol. 3332, pp. 51-60, Feb. 23, 1998.
Ausschnit, Christopher P., et al., “Seeing the Forest for the Trees: A New Approach to CD Control,” Ed. Bhanwar Singh, Proceeding of the SPIE, vol. 3332, pp. 212-220, Feb. 23-25, 1998.
Moharam, M.G., et al., “Stable Implementation of the Rigorous Coupled-Wave Analysis for Surface-Relief Gratings: Enhanced Transmittance Matrix Approach,” Journal of the Optical Society of America, vol. 12, No. 5, pp. 1077-1086, May 1995.
Chateau, Nicolas, “Algorithm for the Rigorous Coupled-Wave Analysis of Grating Diffusion,” Journal of the Optical Society of America, vol. 11, No. 4, pp 1321-1331, Apr. 1994.
G.P. Kotta, et al., “Integrated CD Metrolog for Poly Si Etching”, Lam Research Corporation, Plasma Etch Users Group Meeting, Jan. 17, 2002.
Raymond, Christopher J., “Angle-Resolved Scatterometry of Semiconductor Manufacturing”, Microlithography World, Winter 2000, pp. 18-23.

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