Magnetic memory device having magnetic shield layer, and...

Details Magnetic memory device having magnetic shield layer, and... Magnetic memory device having magnetic shield layer, and...

2005-12-20

2005-12-20

Smith, Brad (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C438S003000

Reexamination Certificate

active

06977401

ABSTRACT:
A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magnetic shield layer which is formed on the side surface of each second wiring layer and formed around the side surface of the memory element.

REFERENCES:
patent: 5902690 (1999-05-01), Tracy et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6288929 (2001-09-01), Lienau
patent: 11-238377 (1999-08-01), None
patent: 2002-526909 (2002-08-01), None
patent: 2001-0100862 (2001-11-01), None
patent: WO 00/72324 (2000-11-01), None

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