Method for removing residue from a magneto-resistive random...

Details Method for removing residue from a magneto-resistive random... Method for removing residue from a magneto-resistive random...

2005-11-15

2005-11-15

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S720000, C438S745000, C134S001100, C134S001200

Reexamination Certificate

active

06964928

ABSTRACT:
A method for removal of residue after plasma etching a film stack comprising a patterned photoresist material layer, a hard mask layer, a conductive layer, and a magnetic layer, wherein the patterned photoresist material layer and the hard mask layer form a dual mask. The method cleans a substrate containing the film stack after the dual mask of the film stack has been etched to remove residue produced during the etching process. The cleaning step is performed in a solution comprising hydrogen peroxide and ammonium hydroxide that removes the residue.

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