Method of manufacturing an electro-optical device

Details Method of manufacturing an electro-optical device Method of manufacturing an electro-optical device

2005-06-21

2005-06-21

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S082000, C438S030000, C438S149000, C438S151000, C438S142000, C257S040000, C257S059000, C315S169100, C315S169300, C349S110000

Reexamination Certificate

active

06908796

ABSTRACT:
A pixel portion100of a liquid crystal display device includes a thin film transistor T including a gate electrode13, a gate insulating film16, a channel region18, and source/drain regions22, a source line (data)26for supplying current to the thin film transistor T and a pixel electrode24. In the formation of a pixel circuit100, a gate electrode13, a gate insulating film16, and the channel region18are firstly formed on a glass substrate10. After the formation of the channel region18and the like, a polyimide film20surrounding the peripheries of the regions to be provide with the source/drain regions22, the pixel electrode24and the source line26on a glass substrate10is formed. The regions surrounded with the wall of the polyimide film20are applied with a liquid material and subjected to a thermal treatment, thereby forming the element of the source/drain regions22and the like.

REFERENCES:
patent: 5079595 (1992-01-01), Suzuki et al.
patent: 5296043 (1994-03-01), Kawakami et al.
patent: 5420706 (1995-05-01), Yamazaki et al.
patent: 6057647 (2000-05-01), Kurosawa et al.
patent: 6194837 (2001-02-01), Ozawa
patent: 2003/0166311 (2003-09-01), Miyazawa
patent: 2004/0005739 (2004-01-01), Furusawa

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