Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-14
2005-06-14
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S307000
Reexamination Certificate
active
06906374
ABSTRACT:
A semiconductor device without any peel off from the insulation film and without any fracture that becomes the cause of a short circuit is obtained even if a metal such as Ru is employed for the storage node. On the semiconductor substrate are provided an underlying interlayer insulation film located over both a capacitor region and a peripheral region, an interlayer insulation film located above the underlying interlayer insulation film, and a tubular metal film having a bottom end portion in contact with the underlying interlayer insulation film, and piercing the interlayer insulation film with the opening side located at the upper side in the capacitor region and the peripheral region. The opening side of the tubular metal film is formed only of a portion extending along the sidewall of a throughhole in the interlayer insulation film.
REFERENCES:
patent: 5851870 (1998-12-01), Alugbin et al.
patent: 6130126 (2000-10-01), Iwakiri
patent: 6175130 (2001-01-01), Hosotani et al.
patent: 6362042 (2002-03-01), Hosotani et al.
patent: 6368910 (2002-04-01), Sheu et al.
patent: 6534375 (2003-03-01), Iijima et al.
patent: 6605530 (2003-08-01), Nakamura et al.
patent: 2004/0075132 (2004-04-01), Lee
patent: 2001-339050 (2001-12-01), None
patent: 1998-070626 (1998-10-01), None
McDermott Will & Emery LLP
Renesas Technology Corp.
Tsai H. Jey
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3496812