Method to form a corrugated structure for enhanced capacitance

Details Method to form a corrugated structure for enhanced capacitance Method to form a corrugated structure for enhanced capacitance

2005-08-09

2005-08-09

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S306000, C257S532000, C257S534000

Reexamination Certificate

active

06927445

ABSTRACT:
A method of forming a corrugated capacitor on a semiconductor component. The method of forming the corrugated capacitor comprises a series of depositing alternating layers of doped silicon glass having different etch rates on a semiconductor component, covering the alternating layers with an etch-resistant material, and etching the alternating layers, thereby forming a capacitor structure having corrugated sides.

REFERENCES:
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5240871 (1993-08-01), Doan et al.
patent: 5300801 (1994-04-01), Blalock et al.
patent: 5466627 (1995-11-01), Lur et al.
patent: 5519238 (1996-05-01), Lu
patent: 5623243 (1997-04-01), Watanabe et al.
patent: 5637523 (1997-06-01), Fazan et al.
patent: 5656536 (1997-08-01), Wu
patent: 5804506 (1998-09-01), Haller et al.
patent: 5827783 (1998-10-01), Hsia et al.
patent: 5830793 (1998-11-01), Schuegraf et al.
patent: 5843822 (1998-12-01), Hsia et al.
patent: 5879987 (1999-03-01), Wang
patent: 5889696 (1999-03-01), Kawakubo et al.
patent: 5930106 (1999-07-01), De Boer et al.
patent: 5972769 (1999-10-01), Tsu et al.
patent: 6025225 (2000-02-01), Forbes et al.
patent: 6027968 (2000-02-01), Nguyen et al.
patent: 6027970 (2000-02-01), Sharan et al.
patent: 6028763 (2000-02-01), Howard
patent: 6040020 (2000-03-01), Sandhu et al.
patent: 6060355 (2000-05-01), Batra et al.
patent: 6074926 (2000-06-01), Cathey et al.
patent: 6097053 (2000-08-01), Ando
patent: 6124607 (2000-09-01), Sandhu et al.
patent: 6204196 (2001-03-01), Sandhu et al.
patent: 6249019 (2001-06-01), Sandhu et al.
patent: 6376303 (2002-04-01), Seo et al.
patent: 2003/0038309 (2003-02-01), Sandhu et al.
S. Wolf and R.N. Tauber, “Silicon Processing for the VLSI Era”, vol. 1—Process Technology, Second Edition, Lattice Press, Sunset Beach, USA; partciularly pp. 198-200. (ISBN #:0-9616721-6-1).

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