Semiconductor device using partial SOI substrate and...

Details Semiconductor device using partial SOI substrate and... Semiconductor device using partial SOI substrate and...

2005-02-15

2005-02-15

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C257S301000, C257S350000

Reexamination Certificate

active

06855976

ABSTRACT:
A semiconductor device includes a first semiconductor layer formed above a first region of a supporting substrate with a buried oxide layer disposed therebetween and a second semiconductor layer formed on a second region of the supporting substrate. An interface between the supporting substrate and the second semiconductor layer is placed in a position deeper than the buried oxide layer.

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