Semiconductor device having reduced on resistance

Details Semiconductor device having reduced on resistance Semiconductor device having reduced on resistance

2005-02-15

2005-02-15

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257S471000, C257S476000, C257S481000

Reexamination Certificate

active

06855983

ABSTRACT:
A trench gate type semiconductor device has an ON resistance that has been reduced. The device has a drain electrode on one side of the substrate and has a drift region, channel region, source region, and a source electrode on the other side. The channel region is sandwiched between a trench gate region covered with insulating film. Current passes when a positive bias voltage is applied to the trench region, and current is cut off when a negative bias voltage is applied.

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