CMOS imager with selectively silicided gate

Details CMOS imager with selectively silicided gate CMOS imager with selectively silicided gate

2005-08-16

2005-08-16

Quach, T. N. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S294000, C257S382000

Reexamination Certificate

active

06930337

ABSTRACT:
The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager.

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