Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-08-02
2005-08-02
Thompson, Craig A. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S103000
Reexamination Certificate
active
06924500
ABSTRACT:
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
REFERENCES:
patent: 5177405 (1993-01-01), Kusuda et al.
patent: 5727008 (1998-03-01), Koga
patent: 5732098 (1998-03-01), Nisitani et al.
patent: 5814839 (1998-09-01), Hosoba
patent: 5828088 (1998-10-01), Mauk
patent: 5981977 (1999-11-01), Furukawa et al.
patent: 6252255 (2001-06-01), Ueta et al.
patent: 6320209 (2001-11-01), Hata et al.
patent: 56-92577 (1981-07-01), None
patent: 57-45583 (1982-03-01), None
patent: 57-52071 (1982-03-01), None
patent: 57-52072 (1982-03-01), None
patent: 57-52073 (1982-03-01), None
patent: 58-50577 (1983-03-01), None
patent: 61-156780 (1986-07-01), None
patent: 63-188938 (1988-08-01), None
patent: 2-263668 (1990-10-01), None
patent: 03-035568 (1991-02-01), None
patent: 6-45648 (1994-02-01), None
patent: 06-067044 (1994-03-01), None
patent: 07-199829 (1995-04-01), None
patent: 08-008217 (1996-01-01), None
patent: 08-255929 (1996-10-01), None
patent: 9-129974 (1997-05-01), None
patent: 09-199419 (1997-07-01), None
patent: 10-125929 (1998-05-01), None
patent: 10-265297 (1998-10-01), None
patent: 10-270801 (1998-10-01), None
patent: 10-312971 (1998-11-01), None
patent: 10-321910 (1998-12-01), None
patent: 11-26883 (1999-01-01), None
patent: 11-075019 (1999-03-01), None
patent: 11-177138 (1999-07-01), None
patent: 11-238687 (1999-08-01), None
patent: 11-251253 (1999-09-01), None
patent: 11-274568 (1999-10-01), None
patent: 11-312840 (1999-11-01), None
patent: 11-514136 (1999-11-01), None
patent: 11-346004 (1999-12-01), None
patent: 2000-012976 (2000-01-01), None
patent: 2000-068593 (2000-03-01), None
patent: 2000-150391 (2000-05-01), None
patent: 2000-183451 (2000-06-01), None
patent: 2000-223417 (2000-08-01), None
patent: 2000-332343 (2000-11-01), None
patent: 2001-085738 (2001-03-01), None
patent: 2001-217503 (2001-08-01), None
patent: 2002-185660 (2002-12-01), None
patent: WO 97/44612 (1997-11-01), None
Applied Physics Letters, vol. 76, No. 22, May 29, 2000, Selective growth at InGaN quantum dot structures and their microphotoluminescence at room temperature, Tachibani et al., pp. 3212-3214.
Journal of Crystal Growth 189/190 (1998) 83-86, “Spatial control of InGaN luminescence by MOCVD selective epitaxy”, Kaplnek et al.
Journal of Crystal Growth, vol. 204, No. 3, pp. 247-418 Jul. 11 (1999), Stringfellow, et al.
J. Wang et al., Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth, Journal of Crystal Growth 197 (1999), pp. 48-53.
Raj Singh et al.,Selective Area Growth og GaN Directly on(0001)Sapphire by the HVPE Technique, MRS Internet Journal Nitride Semiconductor Research, 3, 13 (1998), pp. 1-4.
Zhigang Mao, et al.,Defects in GaN Pyramids Grown on Si(111)Substrates by Selective Lateral Overgrowth, pp. 1-6; Materials Research Society Meeting in Boston, Mass. (1998).
Zheleva et al.,Pendeo-epitaxy—a new approach for lateral growth of gallium nitride structures, MRS Internet J. Nitride Semicond. Res. 4Sl, G3.38 (1999).
Kapolnek et al.,Spatial control of InGaN luminescence by MOCVD selective epitaxy, Journal of Crystal Growth, 189/190 (1998) pp. 83-86.
Biwa Goshi
Doi Masato
Kikutani Tomoyuki
Okuyama Hiroyuki
Oohata Toyoharu
Bell Boyd & Lloyd LLC
Dolan Jennifer M.
Sony Corporation
Thompson Craig A.
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