Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-12-27
2005-12-27
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S216000, C438S287000, C438S769000, C438S775000
Reexamination Certificate
active
06979658
ABSTRACT:
A semiconductor device includes a substrate, a gate oxide film formed on the substrate, a gate electrode provided on the gate oxide film, first and second diffusion regions formed in the substrate at both lateral sides of the gate electrode. The gate electrode includes a first region located immediately underneath the gate electrode and a second region adjacent to the first region, wherein the first and second regions contain N atoms with respective concentrations such that the second region contains N with a higher concentration as compared with the first region.
REFERENCES:
patent: 5464783 (1995-11-01), Kim et al.
patent: 5512519 (1996-04-01), Hwang
patent: 5516707 (1996-05-01), Loh et al.
patent: 5554871 (1996-09-01), Yamashita et al.
patent: 5554876 (1996-09-01), Kusunoki et al.
patent: 5596218 (1997-01-01), Soleimani et al.
patent: 5605848 (1997-02-01), Ngaoaram
patent: 5616519 (1997-04-01), Ping
patent: 5650344 (1997-07-01), Ito et al.
patent: 5674788 (1997-10-01), Wristers et al.
patent: 5726087 (1998-03-01), Tseng et al.
patent: 5731233 (1998-03-01), Yamashita et al.
patent: 5747882 (1998-05-01), Wang et al.
patent: 5750435 (1998-05-01), Pan
patent: 5773325 (1998-06-01), Teramoto
patent: 5783469 (1998-07-01), Gardner et al.
patent: 5786254 (1998-07-01), Hao et al.
patent: 5804496 (1998-09-01), Duane
patent: 5808348 (1998-09-01), Ito et al.
patent: 5861335 (1999-01-01), Hause et al.
patent: 5880040 (1999-03-01), Sun et al.
patent: 5880508 (1999-03-01), Wu
patent: 5955745 (1999-09-01), Yamazaki
patent: 5966606 (1999-10-01), Ono
patent: 5972783 (1999-10-01), Arai et al.
patent: 6020231 (2000-02-01), Wang et al.
patent: 6110784 (2000-08-01), Gardner et al.
patent: 6136654 (2000-10-01), Kraft et al.
patent: 6232187 (2001-05-01), Kuroi et al.
patent: 63-269536 (1988-11-01), None
patent: 04010547 (1992-01-01), None
patent: 4-116869 (1992-04-01), None
patent: 04139882 (1992-05-01), None
patent: 6-204465 (1994-07-01), None
patent: 7-30113 (1995-01-01), None
patent: 07030113 (1995-01-01), None
patent: 7-226499 (1995-08-01), None
patent: 9-64362 (1997-03-01), None
patent: 9-129872 (1997-05-01), None
patent: 10189949 (1998-07-01), None
Maiti et al., “Oxynitride Gate Dielectric Grown in Nitric Oxide (NO): The effect of Reoxidation on Dielectric Reliability of the Active Edge”, IEEE Electron Device Letters, vol. 17 Issue 6, Jun. 1996 pp. 279-281.
Min et al., “Impact of process-induced damage on MOSFET reliability and suppression of damage by the use of no-based oxynitride gate dielectrics”; VLSI Technology, Systems and Applications, 1995. Proceedings of Technical Papers, 1995 International Symposium pp. 273-276.
Bhat et al., “Performance and hot-carrier reliability of N. and P.MOSFET with rapid thermally NO-nitrided Si O2gate dielectrics”, Electron Devices Meeting, 1784, Technical Digest, International 1994, pp. 329-332.
Bhat et al., Electrical properties and reliability of MOSFET's with rapid thermal NO-nitrided Si O2gate dielectrics, Electron devices, IEEE Transactions on May 1995, vol. 42 Issue 5 Part I, pp. 907-914.
Diaz José R.
Fujitsu Limited
Thomas Tom
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Method of fabricating a semiconductor device containing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a semiconductor device containing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device containing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3492263