Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2005-02-08
2005-02-08
Mills, Gregory (Department: 1763)
Coating apparatus
Gas or vapor deposition
With treating means
C156S345350
Reexamination Certificate
active
06851384
ABSTRACT:
In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.
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Nogami Hiroshi
Yuda Katsuhisa
Anelva Corporation
Crowell Michelle
Hayes & Soloway P.C.
Mills Gregory
NEC Corporation
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