Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-04
2005-10-04
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S355000, C257S360000, C257S370000, C257S679000
Reexamination Certificate
active
06952027
ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor region of a first conductivity type. A first insulated-gate field effect transistor having a source/drain region of a second conductivity type connected to an output terminal is formed on the semiconductor region. Further, a semiconductor region of a second conductivity type connected to the gate of the transistor is formed adjacent to the source/drain region of the transistor on the semiconductor region.
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Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Quach T. N.
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