Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-06-07
2005-06-07
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S013000, C257S022000, C257S096000, C257S103000
Reexamination Certificate
active
06903364
ABSTRACT:
Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BlnGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BlnGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BlnGaAlN material system of an opposite conduction type formed substantially without phase separation.
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Baba Takaaki
Harris, Jr. James S.
Takayama Toru
Matsushita Electric - Industrial Co., Ltd.
Tran Minhloan
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