Process for fabricating external contacts on semiconductor...

Metal fusion bonding – Process – Plural joints

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C228S214000, C228S223000, C156S330000

Reexamination Certificate

active

06926191

ABSTRACT:
A polymer masking flux for fabricating external contacts on semiconductor components includes a polymer resin, a fluxing agent and a curing agent. The flux is configured to clean contact pads for the external contacts, and to hold the external contacts on the contact pads during a reflow bonding process. The flux is also configured to cure or polymerize, to form donut shaped polymer support members for the external contacts. In addition, the flux is configured to mask conductive traces in electrical communication with the contact pads, and to electrically insulate the external contacts from the conductive traces. The external contacts can be pre-formed solder balls, or deposited solder bumps. In the case of solder bumps, the flux can include solder particles configured to coalesce into the solder bumps.

REFERENCES:
patent: 5128746 (1992-07-01), Pennisi et al.
patent: 5211763 (1993-05-01), Takemoto et al.
patent: 5385636 (1995-01-01), Poingt et al.
patent: 5417771 (1995-05-01), Arita et al.
patent: 5482736 (1996-01-01), Glenn et al.
patent: 5611476 (1997-03-01), Soderlund et al.
patent: 5851311 (1998-12-01), Diamant et al.
patent: 5880017 (1999-03-01), Schwiebert et al.
patent: 5904782 (1999-05-01), Diep-Quang
patent: 5989362 (1999-11-01), Diamant et al.
patent: 6053398 (2000-04-01), Iizuka et al.
patent: 6059173 (2000-05-01), Mays et al.
patent: 6059894 (2000-05-01), Pendse
patent: 6063647 (2000-05-01), Chen et al.
patent: 6100175 (2000-08-01), Wood et al.
patent: 6118179 (2000-09-01), Farnworth et al.
patent: 6168972 (2001-01-01), Wang et al.
patent: 6180504 (2001-01-01), Farnworth et al.
patent: 6184581 (2001-02-01), Cornell et al.
patent: 6204080 (2001-03-01), Hwang
patent: 6234379 (2001-05-01), Donges
patent: 6259036 (2001-07-01), Farnworth
patent: 6260264 (2001-07-01), Chen et al.
patent: 6276599 (2001-08-01), Ogawa
patent: 6283358 (2001-09-01), Ball
patent: 6293456 (2001-09-01), MacKay
patent: 6297560 (2001-10-01), Capote et al.
patent: 6352881 (2002-03-01), Nguyen et al.
patent: 6402013 (2002-06-01), Abe et al.
patent: 2003/0051770 (2003-03-01), Nishina et al.
patent: WO 99/21226 (1999-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for fabricating external contacts on semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating external contacts on semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating external contacts on semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3490796

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.