Semiconductor device including a gate insulating film on a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

06977415

ABSTRACT:
A semiconductor device comprising a semiconductor substrate having a recess whose depth is not more than 6 nm, a source region and a drain region which are formed in a surface region of the semiconductor substrate so as to sandwich the recess, each of the source region and the drain region being constituted of an extension region and a contact junction region, a gate insulating film formed between the source region and the drain region in the semiconductor substrate, and a gate electrode formed on the gate insulating film.

REFERENCES:
patent: 5448094 (1995-09-01), Hsu
patent: 5712503 (1998-01-01), Kim et al.
patent: 5918134 (1999-06-01), Gardner et al.
patent: 6376888 (2002-04-01), Tsunashima et al.
patent: 6716046 (2004-04-01), Mistry
patent: 2003/0143825 (2003-07-01), Matsuo et al.
patent: 57-087151 (1982-05-01), None
patent: 05-082547 (1993-04-01), None
patent: 09-321151 (1997-12-01), None
patent: 11-251454 (1999-09-01), None
patent: 2000-188394 (2000-07-01), None
patent: 2000-195966 (2000-07-01), None
patent: 2001-168092 (2001-06-01), None
patent: 2002-083956 (2002-03-01), None
patent: 2002-270797 (2002-09-01), None
patent: 2002-530864 (2002-09-01), None
Matsuo, K., “Semiconductor Device and Method of Manufacturing the Same”, U.S. Appl. No. 10/396,453, filed Mar. 26, 2003.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device including a gate insulating film on a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including a gate insulating film on a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including a gate insulating film on a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3490311

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.