Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-14
2005-06-14
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S310000
Reexamination Certificate
active
06906366
ABSTRACT:
A ferroelectric transistor gate structure with a ferroelectric gate and a high-k insulator is provided. The high-k insulator may serve as both a gate dielectric and an insulator to reduce, or eliminate, the diffusion of oxygen or hydrogen into the ferroelectric gate. A method of forming the ferroelectric gate structure is also provided. The method comprises the steps of forming a sacrificial gate structure, removing the sacrificial gate structure, depositing a high-k insulator, depositing a ferroelectric material, polishing the ferroelectric material using CMP, and forming a top electrode overlying the ferroelectric material.
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Hsu Sheng Teng
Zhang Fengyan
Curtin Joseph P.
Eckert George
Fenty Jesse A.
Ripma David C.
Sharp Laboratories of America Inc.
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