Insulated gate semiconductor device

Details Insulated gate semiconductor device Insulated gate semiconductor device

2005-08-16

2005-08-16

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S328000, C257S329000, C257S331000, C257S341000, C257S334000, C257S355000, C257S337000, C257S379000, C257S401000, C257S167000, C257S169000, C257S133000

Reexamination Certificate

active

06930352

ABSTRACT:
An insulated gate semiconductor device includes a control electrode having a trench type structure formed on the surface of a first semiconductor layer of a first conductivity type via a gate insulation film and disposed in a lattice shape, the control electrode having a plurality of first control electrode sections and a plurality of second control electrode sections which intersect with the plurality of first control electrode sections, respectively, and a plurality of fifth semiconductor layers of a second conductivity type which are provided on an interface of the first semiconductor layer in contact with the plurality of second control electrode sections, and connected to at least one of a plurality of second semiconductor layers of the second conductivity type, the fifth semiconductor layers having impurity concentration lower than that of the plurality of second semiconductor layers.

REFERENCES:
patent: 5751024 (1998-05-01), Takahashi
patent: 5883402 (1999-03-01), Omura et al.
patent: 6700156 (2004-03-01), Saitoh et al.
patent: 6768168 (2004-07-01), Takahashi
patent: 2003/0209741 (2003-11-01), Saitoh et al.
patent: 2002-26324 (2002-01-01), None
patent: 3307785 (2002-05-01), None
U.S. Appl. No. 10/463,613, filed Jun. 18, 2003, Saito et al.
U.S. Appl. No. 10/795,325, filed Mar. 9, 2004, Saito et al.
U.S. Appl. No. 10/321,613, filed Dec. 28, 2002, Saitoh et al.

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