Method for producing electrical through hole interconnects...

Details Method for producing electrical through hole interconnects... Method for producing electrical through hole interconnects...

2005-06-21

2005-06-21

Thai, Luan (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S669000, C438S672000, C438S673000

Reexamination Certificate

active

06908856

ABSTRACT:
The invention relates to a method for the fabrication of a device comprising electrical through hole interconnects. In one embodiment, the method comprises anisotropical dry etching of a patternable dielectric material within a substrate hole. One aspect of the invention provides a novel method for producing via or through hole interconnects between microelectronic elements, which is relatively easy to perform and can be applied relatively cheaply compared to the state of the art. The method should, for instance, be applicable in thin chip technology as MCM (Multi Chip Module) and system in a package (SIP) technology.

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patent: 2001/0001292 (2001-05-01), Bertin et al.
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patent: 1 199 744 (2002-04-01), None
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patent: 11 251316 (1999-09-01), None
patent: 2001 015654 (2001-01-01), None

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