Light emitting element and method of making same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Reexamination Certificate

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C257S094000

Reexamination Certificate

active

06977397

ABSTRACT:
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1−X−Y))2O3where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

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patent: 2003/0024475 (2003-02-01), Anderson
patent: 2003/0107098 (2003-06-01), Ota et al.
patent: 2004/0104392 (2004-06-01), Ishizaki
patent: 2004/0262684 (2004-12-01), Fragapane
patent: 1 306 858 (2003-05-01), None
patent: WO 2004/074556 (2004-09-01), None
Encarnacion Garcia Villora, et al., “Cathodoluminescence of undoped β-Ga2O3 single crystals”, Solid State Communications, 120 (Elsevier Science Ltd.), pp. 455-458 (2001);.
Office Action of Japan Patent Office in Application No. JP 2003-137912, dated Apr. 13, 2005.
Abstract of Japanese Publication No. JP 2004/269338, published Sep. 30, 2004.
Abstract of Japanese Publication No. JP 2003/069076, published Mar. 7, 2003.
Abstract of Japanese Publication No. 07/082088, published Mar. 28, 1995.
Abstract of Japanese Publication No. JP 2002/0932243, published Mar. 29, 2002.
English language transition of the above-referenced Japanese Office Action.

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