Thin film transistors

Details Thin film transistors Thin film transistors

2005-02-22

2005-02-22

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S163000

Reexamination Certificate

active

06858477

ABSTRACT:
A method of forming an active plate for a liquid crystal display includes depositing and patterning a gate conductor layer over an insulating substrate; depositing a gate insulator layer over the patterned gate conductor layer; depositing a silicon layer over the gate insulator layer; depositing arid patterning a source and drain conductor layer over the silicon layer; and forming a pixel electrode layer for contacting one of the source and drain of the transistor. The silicon layer includes plasma deposition from a gas comprising at least a compound including an n-type dopant atom and a gas containing silicon, with the ratio of the volume of the compound to the volume of the gas containing silicon being selected to give a doping density of the n-type dopant atoms in the silicon layer of between 2.5×1016and 1.5×1018atoms per cm3.

REFERENCES:
patent: 4704623 (1987-11-01), Piper et al.
patent: 6046479 (2000-04-01), Young et al.
patent: 6246458 (2001-06-01), Koma et al.

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