Semiconductor device fabricated on surface of silicon having...

Details Semiconductor device fabricated on surface of silicon having... Semiconductor device fabricated on surface of silicon having...

2005-06-07

2005-06-07

Quach, T. N. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C438S198000, C438S788000, C438S792000

Reexamination Certificate

active

06903393

ABSTRACT:
In a semiconductor device in which a plurality of field effect transistors are formed on a silicon surface having substantially a <110> orientation, the field effect transistors are disposed on the silicon surface such that a direction connecting a source region and a drain region of the field effect transistor is coincident to a substantially <110> direction.

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