Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-28
2005-06-28
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S347000
Reexamination Certificate
active
06911705
ABSTRACT:
There is disclosed a semiconductor device which comprises a semiconductor substrate, a pair of element isolating insulating films separately formed in the semiconductor substrate and defining an element region, a pair of impurity diffusion regions formed in the element regions and in contact with the element isolating insulating films, respectively, a channel region interposed between the pair of impurity diffusion regions, and a gate electrode formed via a gate insulating film on the channel region, the gate electrode being disposed away from end portions of the impurity diffusion regions. The gate length of the gate electrode is limited to 30 nm or less, the distance between the impurity diffusion regions and the edges of the gate electrode is respectively limited to 10 nm or less, and the distribution in lateral direction of impurity concentration in the impurity diffusion regions is limited to 1 digit/3 nm or more.
REFERENCES:
patent: 6291861 (2001-09-01), Iwata et al.
patent: 6784491 (2004-08-01), Doyle et al.
patent: 2004/0036126 (2004-02-01), Chau et al.
patent: 2004/0262650 (2004-12-01), Iwata et al.
patent: 5-166837 (1993-07-01), None
patent: 7-106574 (1995-04-01), None
patent: 10-70195 (1998-03-01), None
Jun Yuan et al., “Source/Drain Parasitic Resistance Role and Electrical Coupling Effect in sub 50nm MOSFET Design”, Proceedings of ESSDERC 2002, pp. 503-506, Sep. 2002.
Hyunin Lee et al., “Characteristics of MOSFET with Non-overlapped Source-Drain to Gate”, IEICE Trans. Electron., vol. E85-C, No. 5, pp. 1079-1085, May 5, 2002.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Ngo Ngan V.
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