Photoresist monomers, polymers thereof and photoresist...

Details Photoresist monomers, polymers thereof and photoresist... Photoresist monomers, polymers thereof and photoresist...

2005-02-01

2005-02-01

Thornton, Yvette C. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S296000, C430S913000, C526S242000, C526S247000, C526S250000, C526S253000, C526S309000

Reexamination Certificate

active

06849375

ABSTRACT:
Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymers include a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist compositions containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and are developable in aqueous tetramethylammonium hydroxide (TMAH) solutions. In addition, the photoresist compositions have a low light absorbance at 157 nm wavelength, and thus are suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device.wherein Y1, Y2, Y3, Y4, Y5, Y6, Z1, Z2and m are defined in the specification.

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patent: 2001330955 (2001-11-01), None
Machine Translation of JP 2001330955 A (http://www.ipdl.jpo.go.jp/homepg_e.ipdl).

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