Semiconductor device, display device, and method of...

Details Semiconductor device, display device, and method of... Semiconductor device, display device, and method of...

2005-08-16

2005-08-16

Tran, Thien F (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S157000, C438S283000

Reexamination Certificate

active

06929986

ABSTRACT:
In order to eliminate the disconnection of a pixel electrode caused by a change in shape of an interlayer insulating film at the ends of metal wiring, a resin film is formed at the ends of the metal wiring. Because of the resin film at the ends of the metal wiring, the step difference of the ends of the metal wiring is alleviated, and even if the interlayer insulating film is changed in shape, the ends of the metal wiring is prevented from peeling, whereby the disconnection of the pixel electrode can be prevented. Furthermore, the resin film flattens the surface of the interlayer insulating film, and prevents an alignment defect of liquid crystal molecules and a non-uniform electric field, thereby suppressing a minute defect of a light-emitting device caused by the roughness of the surface of the pixel electrode.

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Office Action (Application No. 2002-219269) with partial English Translation, Jul. 20, 2004, 4 pages.

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