Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-29
2005-11-29
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000
Reexamination Certificate
active
06969884
ABSTRACT:
Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.
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Peter VanDerVoom, et al., CMOS Shallow-Trench-Isolation to 50-nm Channel Widths, IEEE Transactions on Electron Devices, vol. 47, No. 6, Jun. 2000, pp. 1175-1182.
Kitamura Yoshinori
Sugimoto Shigeki
Cao Phat X.
Doan Theresa T.
Kabushiki Kaisha Toshiba
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