Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-10-18
2005-10-18
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240, C365S185270
Reexamination Certificate
active
06956772
ABSTRACT:
P-channel MOSFET devices are used as reprogrammable fuse or antifuse elements in a memory decode circuit by utilizing anomalous hole generation. An applied negative gate bias voltage is sufficiently large to cause tunnel electrons to gain enough energy to exceed the band gap energy of the oxide. This causes energetic hole-electron pairs to be generated in the silicon substrate. The holes are then injected from the substrate into the oxide, where they remain trapped. A large shift in the threshold voltage of the p-channel MOSFET results. The device can subsequently be reset by applying a positive gate bias voltage. Various circuits incorporating such fuse or antifuse elements are also disclosed.
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Elms Richard
Micro)n Technology, Inc.
Nguyen Hien
Schwegman Lundberg Woessner & Kluth P.A.
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