Method of fabricating flash memory cell

Details Method of fabricating flash memory cell Method of fabricating flash memory cell

2005-12-06

2005-12-06

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S734000

Reexamination Certificate

active

06972260

ABSTRACT:
A method of fabricating a flash memory cell is provided. The method includes providing a substrate and forming a patterned mask layer over the substrate. Using the patterned mask layer as an etching mask, the substrate is etched to form a trench. Thereafter, a first dielectric layer is formed over the substrate and then a first gate and a second gate is formed beside each sidewall of the trench. A first source/drain region is formed in the substrate at the bottom of the trench. A second dielectric layer is formed over the substrate and then a passivation layer is formed over the second dielectric layer. Afterwards, a portion of the passivation layer, the second dielectric layer and the first dielectric layer are removed. A third gate is formed in the trench and then the mask layer is removed. A third dielectric layer is formed on the substrate. Thereafter, a fourth and a fifth gate are formed beside the respective sidewall of the first gate and the second gate. A second source/drain region is formed in the substrate on each side of the fourth and the fifth gate.

REFERENCES:
patent: 5479368 (1995-12-01), Keshtbod
patent: 5640031 (1997-06-01), Keshtbod
patent: 5656544 (1997-08-01), Bergendahl et al.
patent: 6130453 (2000-10-01), Mei et al.
patent: 6153471 (2000-11-01), Lee et al.
patent: 6214667 (2001-04-01), Ding et al.

Affiliated with

Also associated with

Rating

Method of fabricating flash memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating flash memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating flash memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3484499