Semiconductor integrated circuit device operating at high...

Static information storage and retrieval – Read/write circuit – Complementing/balancing

Reexamination Certificate

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Details

C365S203000, C365S205000, C365S190000

Reexamination Certificate

active

06977856

ABSTRACT:
Disclosed herein is a semiconductor integrated circuit device equipped with a memory circuit, which realizes the speeding up of its operation and low power consumption thereof in a simple configuration. At input/output nodes of a sense amplifier including a CMOS latch circuit for performing an amplifying operation in response to an operation timing signal, a pair of first precharge MOSFETs brought to an on state during a precharge period to thereby supply a precharge voltage, and select switch MOSFETs for connecting the input/output nodes and each complementary bit line pair in response to a select signal are provided. A second precharge MOSFET for short-circuiting the complementary bit line pair is provided between the complementary bit line pair. A memory array is provided which includes dynamic memory cells each comprising an address selecting MOSFET and a storage capacitor, each of which is provided between one of the complementary bit line pair and a word line intersecting it. The thickness of a gate insulating film for the second precharge MOSFET is formed thin as compared with that of a gate insulating film for the selecting MOSFETs.

REFERENCES:
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patent: 6795358 (2004-09-01), Tanaka et al.
patent: 2001/0015928 (2001-08-01), Fujioka et al.
patent: 2005/0007846 (2005-01-01), Tanaka et al.
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patent: 11-31794 (1999-02-01), None
patent: 11-086529 (1999-03-01), None
patent: 2000-100171 (2000-04-01), None

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