Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2005-02-08

2005-02-08

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S609000, C438S689000, C438S691000, C438S694000, C257S737000, C257S738000

Reexamination Certificate

active

06852617

ABSTRACT:
In one embodiment of the invention, a plurality of posts (terminals) stands on a main surface of a semiconductor substrate. A first metal electrode is formed on a side face of each post before providing a sealing layer over the main surface of the semiconductor substrate. The first metal electrode constitutes a portion of an external terminal. After providing the sealing layer, a second metal electrode is formed on each post and the associated first metal electrode. Then, an “alloy” of the first and second metal electrodes is formed by heating these electrodes. Accordingly, the external terminal can be formed on the top face and side face of each post without carrying out a step of removing the sealing layer by means of a laser.

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