Methods for fabricating a contact for an integrated circuit

Details Methods for fabricating a contact for an integrated circuit Methods for fabricating a contact for an integrated circuit

2005-06-07

2005-06-07

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S673000

Reexamination Certificate

active

06903009

ABSTRACT:
According to one embodiment, a method for fabricating a contact is provided. The method can include a step of depositing a Ti layer in order to completely fill a contact hole and on a surrounding surface of an insulation layer. The method can also include a step of partially converting the Ti layer into a TiN layer in such a manner that a TiN layer is provided on the top side in the contact hole. Further, the method can include a step of polishing back the Ti layer and any remaining TiN layer on the surrounding surface of the insulation layer in a single-stage polishing step.

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