Low resistivity copper conductor line, liquid crystal...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S652000, C438S674000, C438S686000, C438S687000

Reexamination Certificate

active

06858479

ABSTRACT:
A method for forming a low resistively copper conductor line includes forming a silver material layer on silicon material, and forming a copper material layer on the silver material layer using an electroplating process.

REFERENCES:
patent: 5788854 (1998-08-01), Desaigoudar et al.
patent: 6197688 (2001-03-01), Simpson
patent: 6221765 (2001-04-01), Ueno
patent: 6291082 (2001-09-01), Lopatin
patent: 6605534 (2003-08-01), Chung et al.

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