Semiconductor device having silicon oxide film

Details Semiconductor device having silicon oxide film Semiconductor device having silicon oxide film

2005-06-14

2005-06-14

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000, C257S321000

Reexamination Certificate

active

06906391

ABSTRACT:
A semiconductor device whose working life can be improved is obtained. This semiconductor device comprises a first conductive layer, a second conductive layer and a silicon oxide film, formed between the first and second conductive layers, containing chlorine introduced therein. Thus, the silicon oxide film is inhibited from formation of electron traps while a large number of holes are formed in an initial stage of electron injection into the silicon oxide film.

REFERENCES:
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5837614 (1998-11-01), Yamazaki et al.
patent: 5854505 (1998-12-01), Suzuki et al.
patent: 6191463 (2001-02-01), Mitani et al.
patent: 04-157765 (1992-05-01), None
patent: 08-029314 (1994-02-01), None
patent: 06-169083 (1994-06-01), None
patent: 10-242310 (1998-09-01), None
patent: 10-256391 (1998-09-01), None
patent: P3234528 (2001-09-01), None
patent: 2002-509361 (2002-03-01), None
patent: WO 99/31732 (1999-06-01), None

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