Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-27
2005-12-27
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S532000
Reexamination Certificate
active
06979854
ABSTRACT:
The invention is directed to a thin-film capacitor device that is adapted to be mounted on a printed wiring board together with an LSI device. After forming a plurality of grooves in a core substrate, a first conductive film is formed, and a first conductor is filled into each groove. After forming a metal film on the first conductive film, a dielectric film is generated by selective anodic oxidation of the metal film. A second conductive film is formed on the dielectric film, and an electrode connected to the second conductive film is formed. After removing the back surface of the core substrate until the grooves are exposed therein, an electrode for connection to the first conductor in each groove is formed. A capacitor is formed by the first conductive film and second conductive film sandwiching the dielectric film therebetween.
REFERENCES:
patent: 6370012 (2002-04-01), Adae-Amoakoh et al.
patent: 6446317 (2002-09-01), Figueroa et al.
patent: 2002-008942 (2002-01-01), None
Ooi Kiyoshi
Rokugawa Akio
Yamasaki Tomoo
Shinko Electric Industries Co. Ltd.
Staas & Halsey , LLP
Trinh Michael
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