Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2005-10-18
2005-10-18
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185180, C365S185210
Reexamination Certificate
active
06956768
ABSTRACT:
A method of programming a multi-level, dual cell memory device. The method includes independently programming a first charge storing cell and a second charge storing cell to respective data states, the data states selected from a blank program level or one of a plurality of charged program levels. Also disclosed is a method of reading the multi-level, dual cell memory device using a plurality of reference currents.
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Hamilton Darlene G.
He Yi
Hsia Edward
Tanpairoj Kulachet
Advanced Micro Devices , Inc.
Hoang Huan
Renner , Otto, Boisselle & Sklar, LLP
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