Semiconductor memory devices with data line redundancy...

Details Semiconductor memory devices with data line redundancy... Semiconductor memory devices with data line redundancy...

2005-08-09

2005-08-09

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S233500, C365S230060

Reexamination Certificate

active

06928008

ABSTRACT:
The semiconductor memory device includes an address change circuit, which is programmable to change a column address, and a column selection circuit, which generates first and second column selection signals addressing columns in first and second portions of a memory array based on the received column address from the address change circuit. When at least one column addressed by the column address in both of the first and second portions of the memory array includes a defective cell, the address change circuit can be programmed to change the address so that defective cells are not addressed.

REFERENCES:
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patent: 5452252 (1995-09-01), Wada et al.
patent: 6567310 (2003-05-01), Einaga et al.
patent: 2004/0004866 (2004-01-01), Hidaka
patent: 10-0135680 (1998-01-01), None

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