Method of fabricating a contact structure having a composite...

Details Method of fabricating a contact structure having a composite... Method of fabricating a contact structure having a composite...

2005-08-16

2005-08-16

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S647000, C438S653000, C438S681000, C438S684000, C438S685000

Reexamination Certificate

active

06930039

ABSTRACT:
This invention is a process for forming an effective titanium nitride barrier layer between the upper surface of a polysilicon plug formed in a thick dielectric layer and a platinum lower capacitor plate in a dynamic random access memory which is being fabricated on a silicon wafer.

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