Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-30
2005-08-30
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S360000, C257S173000
Reexamination Certificate
active
06936896
ABSTRACT:
A low voltage thyristor is disclosed that can be used to provide protection during electrostatic discharge event. The thyristor is connected between voltage reference nodes having a common potential, such as ground nodes, that are isolated from one another during normal operating conditions. During an ESD event on one of the voltage reference nodes, the low voltage thyrister triggers, at a voltage of less than ten volts, to help discharge the ESD current through the otherwise isolated ground node.
REFERENCES:
patent: 3699406 (1972-10-01), Mapother et al.
patent: 3904931 (1975-09-01), Leidich
patent: 5343053 (1994-08-01), Avery
patent: 5465189 (1995-11-01), Polgreen et al.
patent: 5682047 (1997-10-01), Consiglio et al.
patent: 5872379 (1999-02-01), Lee
patent: 6002568 (1999-12-01), Ker et al.
patent: 6242763 (2001-06-01), Chen et al.
patent: 6268639 (2001-07-01), Li et al.
patent: 6462380 (2002-10-01), Duvvury et al.
Umesh Sharma et al, “An ESD Protection Scheme for Deep Sub-micron ULSI Circuits,” 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 85-86.
Ida Richard T.
Xu Hongzhong
Freescale Semiconductor Inc.
Jackson Jerome
Toler Larson & Abel, LLP
LandOfFree
Semiconductor apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3480974