Semiconductor device including a polysilicon, barrier...

Details Semiconductor device including a polysilicon, barrier... Semiconductor device including a polysilicon, barrier...

2005-12-13

2005-12-13

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06975007

ABSTRACT:
An electrode on a semiconductor substrate includes a polysilicon layer, a silicon-implanted layer on the polysilicon layer, a tungsten nitride layer on the silicon-implanted layer, a tungsten nitride layer on the silicon-implanted layer, and a tungsten layer on the tungsten nitride layer. The layer between the polysilicon layer and the tungsten nitride layer may be either a tungsten silicon nitride layer or a silicon-germanium layer.

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C.J. Galewski et al., “Tungsten Gate Structure Formation By Reduced Temperature Conversion of Tungsten Nitride”, pp. 513-519, Sunnyvale, CA.
Yasushi Akasaka et al., “Reliable Pretreatment Technology for Hot Process durning W Polymetal Gate Formation”,Conference Proceedings, pp. 521-526, (2000).

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