Multi-exposure lithography method and system providing...

Details Multi-exposure lithography method and system providing... Multi-exposure lithography method and system providing...

2005-11-01

2005-11-01

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

C430S030000

Reexamination Certificate

active

06960414

ABSTRACT:
Multi-exposure lithography methods and systems that provide improved overlay accuracy. In one aspect of the invention, a method for multi-exposure lithography comprises determining overlay parameters corresponding to each of a plurality of sub-layouts, inputting the overlay parameters into an exposure system, exposing each sub-layout to photoresist on a wafer by using the exposure system, wherein prior to the exposure process for a given sub-layout, a correction process is performed for the sub-layout using a corresponding overlay parameter to correct an overlay of the sub-layout, and developing the exposed photoresist after exposing all of the sub-layouts.

REFERENCES:
patent: 5989761 (1999-11-01), Kawakubo et al.
patent: 6027839 (2000-02-01), Hashimoto
patent: 6331369 (2001-12-01), Kawakubo et al.
patent: 6399283 (2002-06-01), Hoshi
patent: 2000021749 (2000-01-01), None
Seong N. et al. “Pattern Displacement Error Under Off Axis Illumination” Japanese Journal of Applied Physics, Publication Office Japanese Journal of Applied Physics. Tokyo, JP. Part 37, No. 12B Dec. 1998, pp. 6695-6697.

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