Pattern formation method

Details Pattern formation method Pattern formation method

2005-06-07

2005-06-07

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

06902999

ABSTRACT:
After flattening a surface of an underlying film that has pores or includes an organic material by treating the underlying film in a supercritical fluid, a resist film made of a chemically amplified resist material is formed on the underlying film whose surface has been flattened. Next, pattern exposure is performed by selectively irradiating the resist film with exposing light, and then, the resist film is developed after the pattern exposure, so as to form a resist pattern.

REFERENCES:
patent: 6306754 (2001-10-01), Agarwal
patent: 6379874 (2002-04-01), Ober et al.
patent: 6656666 (2003-12-01), Simons et al.
patent: P2002-76116 (2002-03-01), None

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