Method for forming a dielectric film

Details Method for forming a dielectric film Method for forming a dielectric film

Filed on

2005-02-08

Date issued

2005-02-08

Examiner

Nelms, David (Department: 2818)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating of substrate containing semiconductor region or of...

SubSubClass

Insulative material deposited upon semiconductive substrate

Other Related Categories

C438S704000, C438S724000, C438S734000, C438S757000, C438S785000

Type

Reexamination Certificate

Status

active

Patent number

06852646

Description

ABSTRACT:
A method for forming a dielectric film in a PDP includes the steps of: reducing the ambient pressure of an insulating film including a dielectric material before the ambient temperature reaches the reaction temperature of the dielectric material; introducing heated gas to increase the ambient pressure up to the atmospheric pressure while maintaining the ambient temperature at the reaction temperature; and lowering the ambient temperature down to the solidifying temperature of the insulating film while maintaining the atmospheric ambient pressure.

REFERENCES:
patent: 3982887 (1976-09-01), Kendziora et al.
patent: 5266027 (1993-11-01), Kuwayama
patent: 6582972 (2003-06-01), Joshi et al.
patent: 0 908 928 (1999-04-01), None
patent: 08017337 (1996-01-01), None
patent: 08-017337 (1996-01-01), None
patent: 11-108559 (1999-04-01), None
patent: 2000040470 (2000-02-01), None

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