Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-28
2005-06-28
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S356000, C257S360000, C327S565000
Reexamination Certificate
active
06911700
ABSTRACT:
A semiconductor integrated circuit including a digital circuit and an analog circuit which are integrated on a single semiconductor chip comprises a first electrostatic destruction protection circuit, connected to a digital circuit, for protecting the digital circuit from destruction caused by ESD therein by an influence of an input digital signal and a second electrostatic destruction protection circuit, connected to an analog circuit, for protecting the analog circuit from destruction caused by ESD therein by an influence of an input analog signal. A first grounding conductor connected to the first electrostatic destruction protection circuit and a second grounding conductor connected to the second electrostatic destruction protection circuit are connected to each other outside the semiconductor integrated circuit.
REFERENCES:
patent: 5453713 (1995-09-01), Partovi et al.
patent: 5901023 (1999-05-01), Tsuji
patent: 59-193046 (1984-11-01), None
patent: 09-172146 (1997-06-01), None
patent: 10-56138 (1998-02-01), None
patent: 10-085105 (1998-03-01), None
patent: 11-274404 (1999-10-01), None
Japanese Patent Office; “Notice of Reasons for Rejection” (and translation); c. 2005; pp. 1-4; Japan.
Dickey Thomas L.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Tran Minhloan
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