Methods of forming semiconductor circuitry

Details Methods of forming semiconductor circuitry Methods of forming semiconductor circuitry

2005-12-27

2005-12-27

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S416000, C438S429000, C438S430000, C438S478000, C438S199000, C257S369000, C257S616000, C257S622000

Reexamination Certificate

active

06979631

ABSTRACT:
The invention includes a method of forming semiconductor circuitry. A monocrystalline silicon substrate is provided, and a mask is formed which covers a first portion of the substrate and leaves a second portion uncovered. A trench is formed in the uncovered portion and at least partially filled with a semiconductive material that comprises at least one atomic percent of an element other than silicon. The mask is removed and a first semiconductor circuit component is formed over the first portion of the substrate. Also, a second semiconductor circuit component is formed over the semiconductive material that at least partially fills the trench. The invention also includes semiconductor constructions.

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