Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-07
2005-06-07
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06903404
ABSTRACT:
A semiconductor memory device includes a plurality of bit line structures arranged in parallel on a semiconductor substrate and having a plurality of bit lines and an insulating material surrounding the bit lines, an isolation layer formed in a portion in spaces between the bit line structures to define a predetermined active region and having substantially the same height as the bit line structures, a semiconductor layer formed in the predetermined active region surrounded by the bit line structures and the isolation layer and having substantially the same height as the bit line structures and the isolation layer, a plurality of word line structures arranged in parallel on the bit line structures, the isolation layer, and the semiconductor layer, and comprising a plurality of word lines and an insulating material surrounding the word lines, and source and drain regions formed in the semiconductor layer on either side of the word line structures.
REFERENCES:
patent: 6228700 (2001-05-01), Lee
patent: 2003/0109104 (2003-06-01), Chen et al.
English Language Abstract of Korean Publication No.: P2001-0056239.
English Language Abstract of Korean Publication No.: P2000-0044673.
Fourson George
Kebede Brook
Marger & Johnson & McCollom, P.C.
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