Semiconductor storage device and semiconductor integrated...

Details Semiconductor storage device and semiconductor integrated... Semiconductor storage device and semiconductor integrated...

2005-06-07

2005-06-07

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257S349000, C257S350000, C257S351000

Reexamination Certificate

active

06903419

ABSTRACT:
A semiconductor integrated circuit according to the present invention, comprising: a buried insulation film formed in a substrate; a first metal layer formed on a top face of the buried insulation film; a vertical transistor having a channel body formed above the first metal layer and in a vertical direction of the substrate; and a gate formed by sandwiching the channel body from both sides in a horizontal direction of the substrate, or surrounding periphery of the channel body.

REFERENCES:
patent: 2002/0034855 (2002-03-01), Horiguchi et al.
patent: 2002/0051378 (2002-05-01), Ohsawa
patent: 2002/0110018 (2002-08-01), Ohsawa
patent: 10-256560 (1998-09-01), None
patent: 10-326878 (1998-12-01), None
patent: 11-265990 (1999-09-01), None
patent: 2002-246571 (2002-08-01), None
patent: 2003-68877 (2003-03-01), None
U.S. Appl. No. 10/682,955, filed Oct. 14, 2003, Ohsawa.
U.S. Appl. No. 10/854,403, filed May 14, 2004, Yamada et al.

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