Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-27
2005-12-27
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S502000, C257S471000, C257S472000, C438S221000, C438S186000, C438S273000
Reexamination Certificate
active
06979863
ABSTRACT:
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices have a silicon carbide DMOSFET and an integral silicon carbide Schottky diode configured to at least partially bypass a built in diode of the DMOSFET. The Schottky diode may be a junction barrier Schottky diode and may have a turn-on voltage lower than a turn-on voltage of a built-in body diode of the DMOSFET. The Schottky diode may have an active area less than an active area of the DMOSFET.
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Abraham Fetsum
Cree Inc.
Myers Bigel & Sibley & Sajovec
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