Discriminative SOI with oxide holes underneath DC source/drain

Details Discriminative SOI with oxide holes underneath DC source/drain Discriminative SOI with oxide holes underneath DC source/drain

2005-10-25

2005-10-25

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000, C257S351000, C257S352000, C257S507000

Reexamination Certificate

active

06958516

ABSTRACT:
A selective SOI structure having body contacts for all the devices while excluding the buried oxide that is directly underneath diffusions of DC nodes such as applied voltage Vdd, ground GND, reference voltage Vref, and other like DC nodes is provided. The selective SOI structure of the present invention can be used in ICs to enhance the performance of the circuit. The selective SOI structure of the present invention includes a silicon-on-insulator (SOI) substrate material comprising a top Si-containing layer having a plurality of SOI devices located thereon. The SOI devices are in contact with an underlying Si-containing substrate via a body contact region. A DC node diffusion region not containing an underlying buried oxide region is adjacent to one of the SOI devices.

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